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GROWTH OF InGaN MATERIAL AND DEVICE STRUCTURES IN A HIGH PRESSURE MOCVD REACTOR
Title
GROWTH OF InGaN MATERIAL AND DEVICE STRUCTURES IN A HIGH PRESSURE MOCVD REACTOR
Author
Conway, Matthew
Date Created
2019
Subjects--Topical
Materials science, Electrical engineering, Nanotechnology
Description
This is an initial investigation of the super-atmospheric (1.5 – 2.5 bar(a)) Metal-Organic Chemical Vapor Deposition (MOCVD) growth of InGaN materials and experimental, device-like structures. The work was accomplished in a custom MOCVD reactor, s...
THERMOELECTRIC PHENOMENA FOR WASTE HEAT HARVESTING USING WIDE BANDGAP SEMICONDUCTORS
Title
THERMOELECTRIC PHENOMENA FOR WASTE HEAT HARVESTING USING WIDE BANDGAP SEMICONDUCTORS
Author
Kucukgok, Bahadir
Date Created
2015
Subjects--Topical
Materials science, Electrical engineering, Power resources
Description
The objective of this dissertation is to advance the fundamental understanding of the role of crystal defects on thermoelectric (TE) properties of wide band-gap materials in order to enable a new class of TE material for high temperature power gen...