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GROWTH OF InGaN MATERIAL AND DEVICE STRUCTURES IN A HIGH PRESSURE MOCVD REACTOR
Title
GROWTH OF InGaN MATERIAL AND DEVICE STRUCTURES IN A HIGH PRESSURE MOCVD REACTOR
Author
Conway, Matthew
Date Created
2019
Subjects--Topical
Materials science, Electrical engineering, Nanotechnology
Description
This is an initial investigation of the super-atmospheric (1.5 – 2.5 bar(a)) Metal-Organic Chemical Vapor Deposition (MOCVD) growth of InGaN materials and experimental, device-like structures. The work was accomplished in a custom MOCVD reactor, s...
Synthesis of Asymmetric Thiazolo[5,4-d] Thiazole Derivatives for Molecular Sensing Applications
Title
Synthesis of Asymmetric Thiazolo[5,4-d] Thiazole Derivatives for Molecular Sensing Applications
Author
Meadows, Jared
Date Created
2021
Subjects--Topical
Chemistry, Biochemistry, Materials science
Description
This thesis outlines the synthesis and characterization of new asymmetrically substituted thiazolo[5,4-d]thiazole (TTz) compounds. This class of compounds contains a central bicyclic heteroaromatic system that is electron-deficient, and when subst...