Search results
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Title
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GROWTH OF InGaN MATERIAL AND DEVICE STRUCTURES IN A HIGH PRESSURE MOCVD REACTOR
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Author
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Conway, Matthew
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Date Created
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2019
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Subjects--Topical
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Materials science, Electrical engineering, Nanotechnology
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Description
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This is an initial investigation of the super-atmospheric (1.5 – 2.5 bar(a)) Metal-Organic Chemical Vapor Deposition (MOCVD) growth of InGaN materials and experimental, device-like structures. The work was accomplished in a custom MOCVD reactor, s...