Search results
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Title
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Enhanced electron mobility at Gd2O3(100)/Si(100) interface: origin and applications
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Author
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Sitaputra, Wattaka
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Date Created
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2012
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Subjects--Topical
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Materials science, Electrical engineering
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Description
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A growth of a gadolinium oxide (Gd2O3) layer with (100) orientation on a Si(100) substrate was obtained for the first time using molecular beam epitaxy deposition (MBE) with the growth temperature in the range of 150-200°C and the oxygen partial p...