An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

Search for this publication on Google Scholar
Zhang, Y. (Y. ), Zhang, F., Castaneda, J., Gfroerer, T., Friedman, D., Zhang, Y. -H., & Wanlass, M. W. (2022). An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures. Light: Science & Applications. https://doi.org/doi:10.1038/s41377-022-00833-5
Download PDF

Analytics

102 views ◎
30 downloads ⇓


Description

We demonstrate an all optical approach that can surprisingly offer the possibility of yielding much more information than one would expect, pertinent to the carrier recombination dynamics via both radiative and nonradiative processes when only one dominant deep defect level is present in a semiconductor material. By applying a band-defect state coupling model that explicitly treats the inter-band radiative recombination and Shockley–Read–Hall (SRH) recombination via the deep defect states on an equal footing for any defect center occupation fraction, and analyzing photoluminescence (PL) as a function of excitation density over a wide range of the excitation density (e.g., 5–6 orders in magnitude), in conjunction with Raman measurements of the LO-phonon plasmon (LOPP) coupled mode, nearly all of the key parameters relevant to the recombination processes can be obtained. They include internal quantum efficiency (IQE), minority and majority carrier density, inter-band radiative recombination rate (Wr), minority carrier nonradiative recombination rate (Wnr), defect center occupation fraction (f), defect center density (Nt), and minority and majority carrier capture cross-sections (σt and σtM). While some of this information is thought to be obtainable optically, such as IQE and the Wr/Wnr ratio, most of the other parameters are generally considered to be attainable only through electrical techniques, such as current-voltage (I-V) characteristics and deep level transient spectroscopy (DLTS). Following a procedure developed herein, this approach has been successfully applied to three GaAs double heterostructures that exhibit two distinctly different nonradiative recombination characteristics. The method greatly enhances the usefulness of the simple PL technique to an unprecedented level, facilitating comprehensive material and device characterization without the need for any device processing.

Details
Title

An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

Author(s)

Zhang, Y. (Yong), 1960-
Zhang, Fan
Castaneda, Jose
Gfroerer, Timothy
Friedman, Daniel
Zhang, Yong-Hang
Wanlass, Mark W.

UNC Charlotte Affiliate Type

Faculty

Publisher

Springer Nature

Extent

1 online resource

Date Published

2022

Material Type

Journal article

Genre

articles

Resource Type

text

Abstract

We demonstrate an all optical approach that can surprisingly offer the possibility of yielding much more information than one would expect, pertinent to the carrier recombination dynamics via both radiative and nonradiative processes when only one dominant deep defect level is present in a semiconductor material. By applying a band-defect state coupling model that explicitly treats the inter-band radiative recombination and Shockley–Read–Hall (SRH) recombination via the deep defect states on an equal footing for any defect center occupation fraction, and analyzing photoluminescence (PL) as a function of excitation density over a wide range of the excitation density (e.g., 5–6 orders in magnitude), in conjunction with Raman measurements of the LO-phonon plasmon (LOPP) coupled mode, nearly all of the key parameters relevant to the recombination processes can be obtained. They include internal quantum efficiency (IQE), minority and majority carrier density, inter-band radiative recombination rate (Wr), minority carrier nonradiative recombination rate (Wnr), defect center occupation fraction (f), defect center density (Nt), and minority and majority carrier capture cross-sections (σt and σtM). While some of this information is thought to be obtainable optically, such as IQE and the Wr/Wnr ratio, most of the other parameters are generally considered to be attainable only through electrical techniques, such as current-voltage (I-V) characteristics and deep level transient spectroscopy (DLTS). Following a procedure developed herein, this approach has been successfully applied to three GaAs double heterostructures that exhibit two distinctly different nonradiative recombination characteristics. The method greatly enhances the usefulness of the simple PL technique to an unprecedented level, facilitating comprehensive material and device characterization without the need for any device processing.

Subjects--Topics

Optics
Photoluminescence

Is Part Of

Light: science & applications

Language

English

Published Version (Please cite this version)

doi:10.1038/s41377-022-00833-5

Publisher's Version

https://www.nature.com/articles/s41377-022-00833-5

Permalink

http://hdl.handle.net/20.500.13093/work:258

Rights

This item may be protected by copyright and other related rights. Atkins Library provides access to this item for educational and research purposes only; other uses require the permission of the copyright holder.